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| Excelics DATA SHEET * * * * * * +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 40mA PER BIN RANGE 75 EFA240D Rev.1 Low Distortion GaAs Power FET 410 104 D 72 620 155 S G S 100 94 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA Chip Thickness: 75 13 microns All Dimensions In Microns MIN 29.0 16.0 TYP 31.0 31.0 18.5 13.5 45 MAX UNIT dBm dB % 400 280 680 360 -2.0 880 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attach) O -12 -7 -15 -14 23 C/W MAXIMUM RATINGS AT 25 C SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 620mA Ids Forward Gate Current 60mA 10mA Igsf Input Power 29dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 6.0 W 5.0 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA240D DATA SHEET Rev.1 Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: 8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.950 -75.6 11.303 136.8 0.906 -116.5 7.670 113.0 0.888 -138.2 5.566 99.1 0.880 -151.5 4.317 89.4 0.877 -160.7 3.510 81.6 0.875 -167.7 2.952 74.9 0.875 -173.3 2.544 68.8 0.876 -178.1 2.233 63.2 0.877 177.7 1.989 57.8 0.879 173.9 1.792 52.7 0.881 170.4 1.630 47.8 0.883 167.1 1.493 43.0 0.885 164.1 1.377 38.3 0.887 161.1 1.276 33.7 0.890 158.4 1.188 29.2 0.893 155.7 1.109 24.8 0.896 153.1 1.040 20.5 0.899 150.6 0.977 16.2 0.902 148.1 0.920 12.1 0.905 145.7 0.867 8.0 --- S12 --MAG ANG 0.027 53.1 0.036 35.5 0.040 27.9 0.041 24.4 0.042 22.9 0.043 22.5 0.043 22.6 0.044 23.2 0.045 24.1 0.046 25.1 0.046 26.3 0.047 27.5 0.048 28.7 0.050 30.0 0.051 31.2 0.052 32.3 0.054 33.4 0.056 34.4 0.058 35.3 0.060 36.0 --- S22 --MAG ANG 0.195 -119.8 0.264 -142.3 0.290 -152.3 0.303 -157.5 0.312 -160.6 0.321 -162.6 0.329 -164.0 0.338 -165.0 0.347 -165.9 0.356 -166.7 0.366 -167.5 0.377 -168.3 0.389 -169.1 0.400 -169.9 0.413 -170.8 0.426 -171.8 0.439 -172.9 0.453 -174.0 0.467 -175.2 0.481 -176.5 The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each. |
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